POSTDOCTORAL RESEARCHER IN POWER SEMICONDUCTOR DEVICE DESIGN & TEST ENGINEERING Jobs at Swansea University in United Kingdom

*Closing Date

26-01-2022

*Salary: £35,326 to £40,927 per annum together with USS pension benefits

*Hours of work: 35 Hours per week

*Contract: This is a fixed term position for an initial 2 year period with potential for further extension

*Location: This position will be based at the Singleton and Bay Campuses

Main Purpose of Post:

This is an excellent opportunity for an early career researcher to obtain a postdoctoral position in the field of Power Electronics, specifically power semiconductor device design and test engineering, in Swansea University’s  new Centre for Integrative Semiconductor Materials (CISM) – a £50M bespoke semiconductor research facility due to come on-line in 2022.

This facility will be the first of its kind to fully integrate materials-and-device-level fabrication, analysis and testing across mainstream and emerging semiconductor platforms (silicon, narrow and wide gap compound semiconductors, soft next generation semiconductors such as organics and perovskites). This world-leading initiative is in direct response to the needs of the rapidly expanding regional semiconductor industry, and our shared vision of a thriving and modern manufacturing-intensive Welsh Economy.

In addition to the £30M capital investment, CISM has a project portfolio over the next 5 years’ worth >£20M from a diverse range of funding sources including the EU (ERDF {via WEFO & the Welsh Government Smart Expertise Programme}, Horzion2020), industry, and multiple components of UKRI including the Industry Strategy Challenge Fund, EPSRC, Innovate UK, the Aerospace Technology Institute, the Advanced Propulsion Centre, etc. This portfolio is focused on the key CISM priority areas of: i) Clean Energy Systems; ii) Efficient, Low Loss Power Electronics; iii) Semiconductors in Healthcare; and iv) Over-the-Horizon Applications. CISM is a partner in the signature Strength in Places Fund Wave 1 Project ‘CS Connected’ (SIPF), the regional industrial decarbonisation program ‘FLEXIS Extension’ and new Semiconductor technology development via the Smart Expertise ‘ASSET Expansion’ – all of which involve core activities in the development of efficient, wide gap power electronic materials and components for both transport electrification and more efficient renewable energy generating systems. This PDRA position is one of a portfolio of exciting opportunities funded under these initiatives.

The successful candidate will join the broader semiconductor program collaborating with colleagues within Swansea across the Centre for Integrative Semiconductor Materials, and external partners including IQE Ltd, Microchip Technology Ltd and SPTS Ltd, and the collective of the DER National Industrialisation Centres. The role is funded under the UKRI Strength in Places Fund CS Connected and WEFO FLEXIS Extension & ASSET Expansion projects but will also link with efforts under a major portfolio of projects led by Swansea University across numerous Horizon 2020 and Innovate UK wide bandgap power electronics projects. The successful applicant will have access to Swansea University’s semiconductor simulation software (Silvaco & Synopsys), its renowned state-of-the-art power electronics and general electronics laboratories as well as device fabrication clean room facilities and a comprehensive suite of power electronic component pilot line tools to be further enhanced in 2022 with the completion of the CISM facilities.

The University is committed to supporting and promoting equality and diversity in all of its practices and activities. We aim to establish an inclusive environment and welcome diverse applications from the following protected characteristics: age, disability, gender reassignment, marriage and civil partnership, pregnancy and maternity, race (including colour, nationality, ethnic and national origin), religion or belief, sex, sexual orientation.

We have an under-representation of women in the area of research and would particularly welcome applications from women for this position. We also have an under representation of individuals from Black, Asian and Minority Ethnic (BAME) backgrounds and would encourage applications from these groups. Appointments will always be made on merit.

1. A PhD in an Electrical Engineering or Physics disciplines, or considerable and equivalent industry experience in power devices.
2. Experience and knowledge of advanced power semiconductor device physics, including power device architectures and fabrication methodology.
3. Evidence of using semiconductor device simulation tools to design power semiconductor devices.
4. Evidence of active engagement, personal role, and contribution to writing and publishing research papers in top tear peer reviewed international journals.